Germanium as a deep level in alxga1− xas grown by organometallic vapor phase epitaxy
- 1 October 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (10) , 583-587
- https://doi.org/10.1007/bf02669521
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Residual impurities in epitaxial layers grown by MOVPEJournal of Crystal Growth, 1988
- Growth of high-quality 1.93-eV AIGaAs using metalorganic chemical vapor depositionJournal of Electronic Materials, 1987
- The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructuresJournal of Crystal Growth, 1986
- Chemical trends in the activation energies of D X centersApplied Physics Letters, 1984
- Effects of oxygen and water vapour introduction during MOCVD growth of GaAlAsJournal of Crystal Growth, 1984
- Correlation of photoluminescence and deep trapping in metalorganic chemical vapor deposited AlxGa1−xAs (0≤x≤0.40)Journal of Applied Physics, 1984
- A new technique for gettering oxygen and moisture from gases used in semiconductor processingApplied Physics Letters, 1982
- Oxygen gettering by graphite baffles during organometallic vapor phase epitaxial AlGaAs growthApplied Physics Letters, 1982
- Studies of GaAs and AlGaAs layers grown by OM-VPEJournal of Crystal Growth, 1981
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981