Measurements of etch rate and film stoichiometry variations during plasma etching of lead-lanthanum-zirconium-titanate thin films

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Abstract
Plasma etching of lead-lanthanum-zirconium-titanate (PLZT) ferroelectric thin films using a dc hollow-cathode discharge in CF4 and dilute HCl has been investigated. The etch rate and film stoichiometry variations of sputter-deposited lead-lanthanum-titanate (PLT), and solution-deposited PLT, lead-zirconium-titanate (PZT), and PLZT have been measured over a wide range of etching conditions. Etching does not take place at room temperature, but requires substrate heating above 200 °C. Etch rate and film stoichiometry varied strongly as a function of substrate temperature, gas mixture, and film preparation method. For sputter-deposited films, the fastest etch rates of 6500 Å/h were obtained using a mixture of CF4 and dilute HCl. Etch rates for solution-deposited films were higher than for sputter-deposited films, reaching 2000 Å/min in CF4.