The effect of the X conduction band minima on resonant tunnelling and charge build-up in double barrier structures based on n-GaAs/(AlGa)As
- 1 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1731-1735
- https://doi.org/10.1016/0038-1101(89)90303-1
Abstract
No abstract availableKeywords
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