AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio
- 13 July 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (2) , 121-123
- https://doi.org/10.1063/1.98588
Abstract
We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a ‘‘two-step’’ spacer layer incorporated in the devices studied which facilitated the growth of high material quality.Keywords
This publication has 15 references indexed in Scilit:
- Self-consistent analysis of resonant tunneling currentApplied Physics Letters, 1986
- Large room-temperature effects from resonant tunneling through AlAs barriersApplied Physics Letters, 1986
- New Resonant Tunneling Diode with a Deep Quantum-WellJapanese Journal of Applied Physics, 1986
- Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructureApplied Physics Letters, 1986
- Observation of resonant tunneling in AlGaAs/GaAs triple barrier diodesApplied Physics Letters, 1986
- Effect of Silicon Doping Profile on I–V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBEJapanese Journal of Applied Physics, 1986
- Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Resonant tunneling of two-dimensional electrons through a quantum wire: A negative transconductance deviceApplied Physics Letters, 1985
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Tunneling in a finite superlatticeApplied Physics Letters, 1973