Surface reactivity of luminescent porous silicon
- 1 August 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (3) , 2094-2096
- https://doi.org/10.1063/1.354754
Abstract
The effects of addition of a series of organoamine molecules on the luminescence of porous silicon has been examined by steady-state photoluminescence (PL) and Fourier transform infrared spectroscopies. These samples, prepared nonanodically via stain etching techniques and characterized by atomic force microscopy, show dramatic quenching of visible PL upon addition of dilute solutions of the above Lewis base adsorbates. The fractional changes in integrated PL intensity as a function of quencher concentration obey a simple equilibrium model, demonstrating Langmuir-type behavior from which equilibrium constants can be calculated. An observation concomitant with this loss of PL is a diminution of the silicon hydride stretching frequencies near 2100 cm−1.This publication has 16 references indexed in Scilit:
- Chemiluminescence of Anodized and Etched Silicon: Evidence for a Luminescent Siloxene-Like Layer on Porous SiliconScience, 1992
- Microstructural investigations of light-emitting porous Si layersApplied Physics Letters, 1992
- Correlation between silicon hydride species and the photoluminescence intensity of porous siliconApplied Physics Letters, 1992
- Visible luminescence from silicon wafers subjected to stain etchesApplied Physics Letters, 1992
- Electronic structure of light-emitting porous SiApplied Physics Letters, 1992
- Luminescence degradation in porous siliconApplied Physics Letters, 1992
- Reversible luminescence quenching of porous silicon by solventsJournal of the American Chemical Society, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990