Channeling effect measurements in Si by using resonant nuclear backscattering of 18–19-MeV α particles
- 1 June 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (6) , 4322-4324
- https://doi.org/10.1063/1.329246
Abstract
18–19‐MeV He++ axial channeling in Si has been measured by the conventional single‐alignment method. In the backscattering spectrum, a shift of the resonant nuclear scattering peak to high‐energy side was observed when an axial channeling occurred. Moreover, the peak shift became maximal for about critical‐angle incidence of He++. These are direct evidences that the high‐energy‐loss fraction of channeled ions is considerably responsible for forming a backscattering spectrum.This publication has 3 references indexed in Scilit:
- Channeling and related effects in the motion of charged particles through crystalsReviews of Modern Physics, 1974
- On conversion from an energy scale to a depth scale in channelling experimentsThin Solid Films, 1973
- Channeling Effects in the Energy Loss of 3-11-MeV Protons in Silicon and Germanium Single CrystalsPhysical Review B, 1967