Surface treatment of (11̄02) sapphire and (100) silicon for molecular beam epitaxial growth
- 15 April 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (8) , 796-798
- https://doi.org/10.1063/1.94889
Abstract
A low-temperature surface preparation technique for molecular beam epitaxial growth of silicon on sapphire and silicon is described. Thermal desorption of regrown oxide has been accomplished at 850 °C and epitaxial growth at 650 °C. A comparison of two surface treatment techniques for silicon (100) and sapphire (11̄02) substrates is reported.Keywords
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