High-Performance In0.5Al0.5As/In0.5Ga0.5As High Electron Mobility Transistors on GaAs
- 1 November 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (11R)
- https://doi.org/10.1143/jjap.35.5642
Abstract
InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-mismatched on GaAs substrates have been fabricated with a 0.6-µ m- thick step-graded In y Al1- y As buffer layer and a low-source-resistance triple cap layer. A peak extrinsic transconductance of 1060 mS/mm was obtained for a device with a 0.16-µ m- long gate due to both the low source resistance of 0.35 Ω mm brought by the triple cap layer and the high quality In0.5Ga0.5As channel brought by the step-graded In y Al1- y As buffer layer. This transconductance is comparable to or higher than that of HEMTs lattice-matched on InP substrates. A maximum oscillation frequency, f max, of 127 GHz and a cutoff frequency, f t, of 47 GHz were obtained for a fully-passivated device with a 0.66-µ m- long gate, giving a high f max/f t ratio of 2.7. This f max is comparable to those of HEMTs lattice-matched on InP with the same gate length.Keywords
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