Characterisation of porous silicon layers by spectroscopic ellipsometry
- 31 December 1993
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 57 (1-6) , 205-209
- https://doi.org/10.1016/0022-2313(93)90134-9
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- A non-destructive study of the microscopic structure of porous SiJournal of Luminescence, 1993
- Optical characterisation of porous silicon layers by spectrometric ellipsometry in the 1.5–5 eV rangeSolid State Communications, 1992
- Design of a compact uniaxial stress apparatus for optical measurementsReview of Scientific Instruments, 1992
- Characterization of Porous Silicon Layers by Reflectance SpectroscopyMRS Proceedings, 1992
- In situ spectroellipsometry study of the nucleation and growth of microcrystalline siliconJournal of Applied Physics, 1991
- Study of the optical transitions in poly- and micro-crystalline Si by spectroscopic ellipsometrySolid State Communications, 1988
- Temperature dependence of band gaps in Si and GePhysical Review B, 1985
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Precision Bounds to Ellipsometer SystemsApplied Optics, 1975
- Effect of Pressure on Interband Reflectivity Spectra of Germanium and Related SemiconductorsPhysical Review B, 1967