Electronic states at line defects in silicon
- 1 October 1980
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 42 (4) , 577-582
- https://doi.org/10.1080/01418638008227299
Abstract
Using a previously described Green function method, we have performed calculations of the electronic states at a line of vacancies in crystalline silicon. The results presented are discussed in terms of our current understanding of the isolated vacancy and the 60° dislocation.Keywords
This publication has 11 references indexed in Scilit:
- Optimisation studies of localised defect calculations in semiconductorsJournal of Physics C: Solid State Physics, 1978
- Self-Consistent Method for Point Defects in Semiconductors: Application to the Vacancy in SiliconPhysical Review Letters, 1978
- Self-Consistent Green's-Function Calculation of the Ideal Si VacancyPhysical Review Letters, 1978
- Electron states associated with the core region of the 60° dislocation in silicon and germaniumPhysica Status Solidi (b), 1978
- Electronic states associated with the 60° edge dislocation in siliconPhilosophical Magazine, 1977
- Localized defects in III-V semiconductorsPhysical Review B, 1976
- Edge dislocation behaviour in Au–n-silicon diodesPhysica Status Solidi (a), 1975
- Two-electron impurity states in GaP:OJournal of Physics C: Solid State Physics, 1975
- Edge Dislocations in Silicon as One Dimensional SurfacesJapanese Journal of Applied Physics, 1974
- Dislocations in the diamond latticeJournal of Physics and Chemistry of Solids, 1958