Design, fabrication, and characterization of ultra high speed AlGaAs/InGaAs MODFETs
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 176-179
- https://doi.org/10.1109/iedm.1988.32783
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFETIEEE Transactions on Electron Devices, 1988
- Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETsIEEE Transactions on Electron Devices, 1988
- Electron-beam fabrication of quarter-micron T-shaped-gate FETs using a new tri-layer resist systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980