Room temperature observation of single electron tunneling effect in self-assembled metal quantum dots on a semiconductor substrate

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Abstract
We report on the observation of room-temperature single electron tunneling phenomena in a metal-insulator-metal-semiconductor double-junction structure. The nanosized Agdots were self-assembled on a Sb-terminated Si(100) surface, and the Coulomb gap and staircases were observed in the local current–voltage (I–V) measurements using scanning tunneling microscopy. The I–V characteristics exhibiting the single electron tunneling behavior vary significantly with the variation of the measurement position within the same Ag droplet. These phenomena are well described by the tip-dot(Ag)-Si double-junction picture.