Scanning-tunneling-microscopy investigation of the quantum-size effect in epitaxialCoSi2/Si(111)

Nearly coherent overlayers of ${\mathrm{CoSi}}_2$ were grown on Si(111) by molecular-beam epitaxy and examined by an in situ scanning-tunneling microscope at 77 K. The quantum-size effect in ${\mathrm{CoSi}}_2$ overlayers was demonstrated using scanning-tunneling microscopy. Subbands in the ${\mathrm{\Lambda }}_1$ and ${\mathrm{\Lambda }}_3$ energy bands along the ΓL symmetry line were observed, and the observed subband spacings agree well with independent band-structure computations.