InAsSbBi alloys grown by organometallic vapor-phase epitaxy
- 15 March 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (6) , 2857-2863
- https://doi.org/10.1063/1.356179
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Fundamental aspects of vapor growth and epitaxyJournal of Crystal Growth, 1991
- Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectorsApplied Physics Letters, 1991
- Investigation of organometallic vapor phase epitaxy of InAs and InAsBi at temperatures as low as 275 °CJournal of Applied Physics, 1991
- OMVPE growth and characterization of Bi-containing III–V alloysJournal of Crystal Growth, 1991
- Decomposition mechanisms of trimethylantimony and reactions with trimethylindiumChemistry of Materials, 1991
- Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVDJournal of Crystal Growth, 1988
- Growth of InSb1-xBix single crystals by Czochralski methodJournal of Crystal Growth, 1972
- Liquid Phase Epitaxial Growth of InAs[sub 1−x] Sb[sub x]Journal of the Electrochemical Society, 1971
- Propriétés des alliages InSb1−xBix II. Absorption OptiquePhysica Status Solidi (b), 1969
- Propriétés des alliages InSb1−xBix I. Mesures électriquesPhysica Status Solidi (b), 1969