Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode
- 25 January 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (4) , 609-611
- https://doi.org/10.1063/1.123161
Abstract
We report the fabrication of a vacuum-deposited light-emitting device which emits light from its top surface through an Al cathode using p-type doped silicon as the anode material. Enhanced hole injection is clearly demonstrated from the p-Si anode as compared to the indium–tin–oxide (ITO) anode. The mechanisms of hole injection from both the p-Si and ITO anodes into the organic layer are investigated and a possible model based on anode surface band bending is proposed. During the operation of the organic light-emitting device, the surface band bending of the anode plays a very important role in modifying the interfacial barrier height between the anode and the organic layer.Keywords
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