Improvement of electron diffusion lengths in polycrystalline silicon wafers by aluminium
- 1 January 1987
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 22 (7) , 645-648
- https://doi.org/10.1051/rphysap:01987002207064500
Abstract
In order to improve the electron diffusion lengths Ln in P-type large grained polycrystalline silicon wafers, an aluminium layer was deposited on the back surface. The structure is then annealed at 450 °C during 2h. It was found that Ln is increased, provided the initial value was smaller than 50 µm, and tht the mean density of dislocations is larger than 5 x 104 cm-2. Backside gettering appears to be the most likely mechanism to explain the results and it is assumed that dissolved oxygen may be involvedKeywords
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