A comparison of dopant type and aluminium mole fraction on persistent photoconductivity in HEMT structures grown by MOVPE
- 1 June 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (6) , 586-589
- https://doi.org/10.1088/0268-1242/5/6/022
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Selectively Se-doped AlGaAs/GaAs heterostructures with reduced D X center concentrations grown by molecular beam epitaxyApplied Physics Letters, 1988
- The capture barrier of the D X center in Si-doped AlxGa1−xAsJournal of Applied Physics, 1987
- Degradation-free modulation-doped field-effect transistors grown by organometallic chemical vapor depositionApplied Physics Letters, 1985
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy SystemJapanese Journal of Applied Physics, 1985
- Comprehensive analysis of Si-doped (): Theory and experimentsPhysical Review B, 1984
- Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAsJournal of Crystal Growth, 1984
- Electron density of the two-dimensional electron gas in modulation doped layersJournal of Applied Physics, 1983
- A new technique for gettering oxygen and moisture from gases used in semiconductor processingApplied Physics Letters, 1982