Dynamic and noise properties of tunable multielectrode semiconductor lasers including spatial hole burning and nonlinear gain
- 1 March 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (3) , 844-855
- https://doi.org/10.1109/3.206568
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Dynamic and noise properties of multi-electrode tunable semiconductor lasersJournal de Physique III, 1992
- Observation of power dependent linewidth enhancement factor in 1.55 μm strained quantum well lasersElectronics Letters, 1991
- Injection locking in distributed feedback semiconductor lasersIEEE Journal of Quantum Electronics, 1991
- Drive current noise induced linewidth in tunable multielectrode lasersIEEE Photonics Technology Letters, 1991
- Theory of linewidth for multielectrode laser diodes with spatially distributed noise sourcesIEEE Journal of Quantum Electronics, 1991
- Analysis of the phase-amplitude coupling factor and spectral linewidth of distributed feedback and composite-cavity semiconductor lasersIEEE Journal of Quantum Electronics, 1990
- Gain nonlinearities in semiconductor lasers: Theory and application to distributed feedback lasersIEEE Journal of Quantum Electronics, 1987
- Linewidth broadening factor in semiconductor lasers--An overviewIEEE Journal of Quantum Electronics, 1987
- Theory of spontaneous emission noise in open resonators and its application to lasers and optical amplifiersJournal of Lightwave Technology, 1986
- Analysis of gain suppression in undoped injection lasersJournal of Applied Physics, 1981