Current-induced breakdown in p-type collector AlGaAs/GaAs HBTs
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (3) , 807-810
- https://doi.org/10.1109/16.47791
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector regionIEEE Electron Device Letters, 1988
- A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structureIEEE Transactions on Electron Devices, 1988
- A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistorsIEEE Electron Device Letters, 1986
- Nonsaturating velocity-field characteristic of gallium arsenide experimentally determined from domain measurementsJournal of Applied Physics, 1974