Surface oxidation activates indium tin oxide for hole injection
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- 1 January 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (1) , 572-576
- https://doi.org/10.1063/1.371901
Abstract
Oxygen plasma treatment of indium tin oxide (ITO) results in a change in work function and electron affinity by ∼0.5 eV. This change correlates with the measured increase in injected current in simple “hole-only” organic devices with O-plasma treated ITO electrodes. Neither addition nor removal of surface hydroxyl functionality accounts for the observed work function and electron affinity changes. X-ray and ultraviolet photoelectron spectroscopies show a new type of oxygen species is formed. Oxidation of surface Sn-OH to surface Sn-O• units is proposed to account for the observed changes in O-plasma treated ITO; this proposal can explain a wide variety of previously described ITO surface activation results.Keywords
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