Transient response measurement of kink effect inInAlAs/InGaAs/InP HEMTs

17 February 1994

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 30 (4) , 368-369
https://doi.org/10.1049/el:19940037

Abstract

The kink effect in InAlAs/InGaAs/InP HEMTs is examined in the time domain with the use of voltage pulses applied to the drain of the device. The transient response shows opposite slopes below and above the kink voltage associated with carrier capture and emission. The results are found to be consistent with frequency-domain dispersion measurements made on the output resistance. The causes and time constants of the transients are discussed.

Keywords

This publication has 2 references indexed in Scilit:

InAlAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process
Electronics Letters, 1991
Frequency-dependent characteristics and trap studies of lattice-matched (x=0.53) and strained (x<0.53) In/sub 0.52/Al/sub 0.48/As/In/sub x/ Ga/sub 1-x/As HEMTs
IEEE Transactions on Electron Devices, 1991