Lattice Relaxation Accompanying Carrier Capture and Emission by Deep Electronic Levels in Semiconductors
- 20 October 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 57 (16) , 2069-2072
- https://doi.org/10.1103/physrevlett.57.2069
Abstract
It is proposed that measurements of the isothermal pressure dependences of emission rates and capture cross sections can provide a quantitative measure of the lattice volume relaxation accompanying carrier capture and emission processes by deep levels. The method is demonstrated for the gold acceptor and the oxygen-vacancy pair ( center) levels in silicon. The results represent what is believed to be the first quantitative determination of these relaxations for any deep levels in any semiconductor.
Keywords
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