On the point and line defects which are common to both degraded light emitting diodes and plastically deformed GaAs
- 1 April 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (4) , 2097-2102
- https://doi.org/10.1063/1.332260
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Pressure Dependence of Thermal Conductivity of Liquid 3He at Very Low TemperaturesJournal of the Physics Society Japan, 1980
- Degradation of GaAs0.9P0.1 light-emitting diodes for optical fiber communication with internal stressJournal of Applied Physics, 1980
- Strain-enhanced luminescence degradation in GaAs/GaAlAs double-heterostructure lasers revealed by photoluminescenceJournal of Applied Physics, 1979
- Photoluminescence at dislocations in GaAs and InPJournal of Applied Physics, 1979
- The origin of dislocation climb during laser operationApplied Physics Letters, 1977
- Dislocation climb model in compound semiconductors with zinc blende structureApplied Physics Letters, 1976
- Observation of dark line defects in GaP green LED’s under an external uniaxial stressApplied Physics Letters, 1976
- Defect structure of degraded heterojunction GaAlAs−GaAs lasersApplied Physics Letters, 1975
- Photoluminescence at Dislocations in GaAsPhysical Review Letters, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973