The diffusion of gold in ‘semi-infinite’ single crystals of silicon

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Abstract
Our earlier theoretical and experimental studies of gold diffusion into silicon, as a function of dislocation density, have been extended from the case of diffusion in thin slices to that of diffusion into thick pieces of single crystal silicon. As in the earlier experimental results, a small, but consistently observed effect of dislocation density was found, and is interpreted by means of a model in which vacancy generation occurs at climbing grown-in dislocations. Values of D 1 and Z2, the two effective diffusion coefficients for the dissociative mechanism, have been determined from both the new radiotracer results, and a re-interpretation of the near surface region of the profiles from the previously published thin slice experiments. D 1 has the value ≈ 3 × 10−7 cm2/sec over the temperature range 900–1100°C, and the second coefficient has the value D 2= 1·94 × 10−7. exp (-0·61 eV/kT) cm2/sec in the range 900–1200°C. The tracer monovacancy self-diffusion coefficient for silicon is estimated, from D 2 and solubility data for gold in silicon, as D IV T=1·98 × 10−7. exp (-2·40 eV/kT) cm2/sec. in the range 900–1200°C.

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