Ionization-enhanced solid phase epitaxy of amorphous silicon with boron impurities
- 2 May 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (18) , 1517-1519
- https://doi.org/10.1063/1.99117
Abstract
We have made the first high-resolution, laser interferometric measurements of the functional dependence of the velocity of (100) silicon solid phase epitaxy on the concentration of implanted boron impurities NB. At all measurement temperatures (450–550 °C), and for all NB<5×1019 cm−3 the fractional increase in the velocity was identically equal to the dimensionless ratio NB/Ni, where Ni is a thermally activated factor. This result disagrees with the predictions of all models for the effect of impurities on solid phase epitaxial growth.Keywords
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