Abstract
A simple theoretical method for calculating superlattice electronic structures based on the bond-orbital model is presented. The method combines the virtues of the envelope-function (k⋅p) and tight-binding methods. The method contains no fitting parameters; all interaction parameters involved are directly related to parameters for describing bulk bands near the zone center in the k⋅p perturbation theory. Subband structures of a GaAs-Alx Ga1xAs and an InAs-GaSb superlattice are calculated for illustration.