Electronic states at unrelaxed and relaxed GaAs (110) surfaces
- 15 February 1978
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 17 (4) , 1816-1827
- https://doi.org/10.1103/physrevb.17.1816
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Photoemission and band-structure studies of the GaAs(110) surfaceJournal of Vacuum Science and Technology, 1977
- Intrinsic and Defect-Induced Surface States of Cleaved GaAs(110)Physical Review Letters, 1976
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Electronic surface properties of III–V semiconductors: Excitonic effects, band-bending effects, and interactions with Au and O adsorbate layersJournal of Vacuum Science and Technology, 1976
- Electronic structure of a metal-semiconductor interfacePhysical Review B, 1976
- (110) surface states in III-V and II-VI zinc-blende semiconductorsPhysical Review B, 1976
- Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAsPhysical Review Letters, 1975
- Relation of Schottky Barriers to Empty Surface States on III-V SemiconductorsPhysical Review Letters, 1975
- Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)Physical Review Letters, 1974
- Surface Potential, Charge Density, and Ionization Potential for Si(111)-a Self-Consistent CalculationPhysical Review Letters, 1974