A microwave GaAs insulated gate FET
- 15 February 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (4) , 247-248
- https://doi.org/10.1063/1.90007
Abstract
Microwave power gain has been obtained in MIS gated field effect transistors (FET’s) made on n‐type GaAs with 4‐μm gate lengths. The magnitude of this gain is comparable to that observed with similar geometry Schottky gate devices.Keywords
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