Determination of implantation profiles in solids by secondary ion mass spectrometry

Publisher Website

11 September 1972

journal article
Published by Elsevier in Physics Letters A

Vol. 41 (2) , 177-178
https://doi.org/10.1016/0375-9601(72)91101-2

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

Analysis of surfaces utilizing sputter ion source instruments
Surface Science, 1971
Selective X-ray generation by heavy ions (Part 2) measurement of the concentration distribution of ion-implanted antimony in silicon by the use of selective heavy ion X-ray excitation
Radiation Effects, 1971
Antimony implanted silicon: A comparison between the total implanted concentration profile and the donor concentration profile
Radiation Effects, 1970
RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICON
Applied Physics Letters, 1968