0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length
- 5 October 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 47 (1) , 117-122
- https://doi.org/10.1016/s0038-1101(02)00258-7
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The Effect of Surface Passivation and Illumination on the Device Properties of AlGaN/GaN HFETsPhysica Status Solidi (a), 2001
- Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTsIEEE Electron Device Letters, 2001
- Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistorsJournal of Applied Physics, 2000
- Gate length scaling for Al/sub 0.2/Ga/sub 0.8/N/GaN HJFETs: two-dimensional full band Monte Carlo simulation including polarization effectIEEE Transactions on Electron Devices, 2000
- High breakdown GaN HEMT with overlapping gate structureIEEE Electron Device Letters, 2000
- High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBEElectronics Letters, 2000
- GaN/AlGaN high electron mobility transistors withf τ of 110 GHzElectronics Letters, 2000
- GaN: Processing, defects, and devicesJournal of Applied Physics, 1999
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- High transconductance AlGaN/GaN heterostructurefield effect transistors on SiC substratesElectronics Letters, 1997