Is Self-Organisation During Ostwald Ripening a Crucial Process in Ion Beam Synthesis ?
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose regionJournal of Materials Research, 1993
- Transport in submicrometer buried mesotaxial cobalt silicide wiresApplied Physics Letters, 1993
- Modelling of the formation of buried dielectric layers by ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Ion beam synthesis of epitaxial silicides: fabrication, characterization and applicationsMaterials Science Reports, 1992
- Ion beam synthesis of thin buried layers of SiO2 in siliconVacuum, 1986
- A model for the oxidation of silicon by high dose oxygen implantationThin Solid Films, 1985
- Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into siliconVacuum, 1984