In surface segregation in InGaN/GaN quantum wells
- 24 January 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 251 (1-4) , 471-475
- https://doi.org/10.1016/s0022-0248(02)02443-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Surface Segregation in Group-III Nitride MBEPhysica Status Solidi (a), 2001
- Indium Surface Segregation during Growth of (In,Ga)N/GaN Multiple Quantum Wells by Plasma-Assisted Molecular Beam EpitaxyPhysica Status Solidi (b), 2001
- Group-III nitride quantum heterostructures grown by molecular beam epitaxyJournal of Physics: Condensed Matter, 2001
- High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopyApplied Physics Letters, 2001
- Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wellsPhysical Review B, 2000
- Indium segregation in InGaN quantum-well structuresApplied Physics Letters, 2000
- GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxyApplied Physics Letters, 1999
- Atomic Scale Indium Distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N Quantum Well StructureJapanese Journal of Applied Physics, 1997
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wellsApplied Physics Letters, 1992