In situ mass-spectrometric evaluation of impurities in trimethylgallium
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 10-14
- https://doi.org/10.1016/0022-0248(84)90389-0
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- An analytical evaluation of GaAs grown with commercial and repurified trimethylgalliumJournal of Electronic Materials, 1982
- Size fluctuations and high-energy laser operation of AlxGa1−xAs-AlAs-GaAs quantum-well heterostructuresJournal of Applied Physics, 1981
- Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET'sJournal of Crystal Growth, 1981
- Minority carrier lifetime and luminescence in MOVPE-grown (Al,Ga)As epilayers and DH lasersJournal of Crystal Growth, 1981
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Multiple-pass CO2 laser heating of a ϑ-pinch plasmaApplied Physics Letters, 1979
- Organometallic-sourced VPE AlGaAs/GaAs concentrator solar cells having conversion efficiencies of 19%Applied Physics Letters, 1978
- A high-resolution electron microscopy study of the Si-SiO2 interfaceApplied Physics Letters, 1978
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968