2.2-W continuous-wave diffraction-limited monolithically integrated master oscillator power amplifier at 854 nm
- 1 April 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (4) , 440-442
- https://doi.org/10.1109/68.559381
Abstract
A monolithically integrated master oscillator power amplifier (M-MOPA) with a flared power amplifier region operating at 854 nm has been fabricated that radiates in a single diffraction-limited lobe to an output power of 2.2-W continuous wave (CW). Additionally, the far field is extinguished by 26 dB with the master oscillator turned off enabling applications requiring digital modulation.Keywords
This publication has 9 references indexed in Scilit:
- 2.2 W cw diffraction-limited monolithically integrated master oscillator power amplifier at 854 nmPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-power singlemode AlGaAs distributed Bragg reflectorlaser diodes operating at 856 nmElectronics Letters, 1994
- 1.3 W CW, diffraction-limited monolithically integrated master oscillator flared amplifier at 863 nmElectronics Letters, 1993
- Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifierIEEE Journal of Quantum Electronics, 1993
- High-power, strained-layer amplifiers and lasers with tapered gain regionsIEEE Photonics Technology Letters, 1993
- 2.0 W CW, diffraction-limited operation of a monolithically integrated master oscillator power amplifierIEEE Photonics Technology Letters, 1993
- 1 Gbit/s coherent optical communication system using a 1 W optical power amplifierElectronics Letters, 1993
- 1.1 W CW, diffraction-limited operation of a monolithically integrated flared-amplifier master oscillator power amplifierElectronics Letters, 1992
- High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifierApplied Physics Letters, 1992