High-power, strained-layer amplifiers and lasers with tapered gain regions
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (6) , 605-608
- https://doi.org/10.1109/68.219683
Abstract
Laterally tapered gain regions designed to accommodate the diffraction of narrow single-lobe beams that have been used in both optical amplifiers and lasers are described. Amplifier output power of 3.5 W with 3.1 W in a 1.05 times diffraction-limited lobe and laser output power of over 4 W with approximately half the power in a 1.7 times diffraction-limited lobe have been achieved.Keywords
This publication has 8 references indexed in Scilit:
- Monolithic High-power Ingaas/algaas Grating Surface Emitting Fanned-out Amplifier-lasers Emitting Monochromatic High-quality BeamsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 1.1 W CW, diffraction-limited operation of a monolithically integrated flared-amplifier master oscillator power amplifierElectronics Letters, 1992
- 2.0 W CW, diffraction-limited tapered amplifier with diode injectionElectronics Letters, 1992
- High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifierApplied Physics Letters, 1992
- Characteristics of active grating-surface-emitting amplified lasersPublished by SPIE-Intl Soc Optical Eng ,1992
- 3.3 W CW diffraction limited broad area semiconductor amplifierElectronics Letters, 1992
- Resonant self-aligned-stripe antiguided diode laser arrayApplied Physics Letters, 1992
- High power, diffraction-limited emission from monolithically integrated active grating master oscillator power amplifierElectronics Letters, 1991