Monolithic High-power Ingaas/algaas Grating Surface Emitting Fanned-out Amplifier-lasers Emitting Monochromatic High-quality Beams
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 521-522
- https://doi.org/10.1109/leos.1992.694074
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-power CW distributed out-coupled grating surface emitting laser-amplifiers with narrow spectra and high-quality beamsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- High-power monolithic phase-locked arrays of antiguided semiconductor diode lasersIEE Proceedings J Optoelectronics, 1992
- A GaInAsP/InP tapered-waveguide semiconductor laser amplifier integrated with a 1.5 mu m distributed feedback laserIEEE Photonics Technology Letters, 1991
- Characteristics of coherent two-dimensional grating surface emitting diode laser arrays during CW operationIEEE Journal of Quantum Electronics, 1991
- Short-cavity distributed Bragg reflector laser with an integrated tapered output waveguideIEEE Photonics Technology Letters, 1991
- GaAlAs window lasers emitting 500 mW CW in fundamental modeElectronics Letters, 1990