The electronic structure of cleaved silicon (111) surfaces following adsorption of aluminium
- 20 May 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (14) , L369-L374
- https://doi.org/10.1088/0022-3719/13/14/005
Abstract
The authors find that the presence of less than 4*1013 atoms per cm2 of aluminium on a clean cleaved silicon (111) surface may lead to a phase transition from the well known reconstructed 2*1 to an apparent 1*1 structure. The phase transition is accompanied by a drastic redistribution of surface electronic states and the main features of angle-resolved photoemission experiments are considered in terms of recent theories of reconstructed and unreconstructed surfaces. Possible mechanisms involved in the phase transition are briefly discussed.Keywords
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