Cleaved Si(111) surfaces: Geometrical and annealing behaviour
- 1 February 1979
- journal article
- Published by Elsevier in Surface Science
- Vol. 80, 45-55
- https://doi.org/10.1016/0039-6028(79)90662-9
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- On the geometrical structure of cleaved Si (111) surfacesJournal of Vacuum Science and Technology, 1978
- Si (111) 7 × 7 surface structure: Calculations of LEED intensity and comparison with experimentPhysical Review B, 1977
- Effect of reconstruction during epitaxial growthJournal of Vacuum Science and Technology, 1977
- Si(111) 7×7 surface structureJournal of Vacuum Science and Technology, 1977
- Atomic Structure of the Si(111) 7×7 SurfacePhysical Review Letters, 1977
- Probable atomic structure of reconstructed Si(001)2×1 surfaces determined by low-energy electron diffractionJournal of Physics C: Solid State Physics, 1977
- Low-Energy Electron Diffraction Determination of the Atomic Arrangement on Impurity-Stabilized Unreconstructed Si{111} SurfacesPhysical Review Letters, 1976
- Surface reconstruction on semiconductorsSurface Science, 1976
- Correlation of electronic surface properties and surface structure on cleaved silicon surfacesJournal of Applied Physics, 1972
- Surface Structures and Properties of Diamond-Structure SemiconductorsPhysical Review B, 1961