Correlation of electronic surface properties and surface structure on cleaved silicon surfaces
- 1 October 1972
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (10) , 3917-3919
- https://doi.org/10.1063/1.1660848
Abstract
The clean, cleaved Si (111) surface exhibits a 2×1 LEED structure which converts to the Si (111)‐7 structure upon anneal at elevated temperatures. The conversion temperature was determined to be 370°C. Measurements taken at room temperature indicate that, after passing through a maximum, the surface conductivity decreases with increasing annealing temperature up to the conversion temperature. For higher annealing temperatures the surface conductivity increases again as the Si (111)‐7 structure develops. The correlation of LEEDpattern with the change of surface conductivity demonstrates that the surface states at the clean Si (111) surface are strongly dependent on surface atomic arrangement with respect to superstructure and domain boundaries.This publication has 14 references indexed in Scilit:
- The origin of surface statesSurface Science, 1971
- Surface States on Clean and on Cesium‐Covered Cleaved Silicon SurfacesPhysica Status Solidi (b), 1970
- ON THE NATURE OF Si (111) SURFACESApplied Physics Letters, 1969
- Correlation between Surface Structure and Surface States at the Clean Germanium (111) SurfaceJournal of Applied Physics, 1969
- Thin reaction layers and the surface structure of silicon (111)Surface Science, 1969
- SILICON (111) 7×7 STRUCTUREApplied Physics Letters, 1969
- Leitfähigkeit und Feldeffekt reiner SiliziumspaltflächenPhysica Status Solidi (b), 1967
- Elektronische Zustände an reinen SiliziumoberflächenPhysica Status Solidi (b), 1965
- Surface states on clean siliconSurface Science, 1964
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954