Efficient photovoltaic devices for InP semiconductor/liqud junctions
- 1 August 1989
- journal article
- Published by Springer Nature in Nature
- Vol. 340 (6235) , 621-623
- https://doi.org/10.1038/340621a0
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- A light-variation insensitive high efficiency solar cellNature, 1987
- Measurement of the activation barrier for carrier transport at n-gallium arsenide semiconductor/liquid junctionsJournal of the American Chemical Society, 1985
- Electrical study of Schottky barrier heights on atomically clean and air-exposed n-InP(110) surfacesApplied Physics Letters, 1985
- Chemical reactions at the noble and near-noble metal/InP interfaces: Comparison to Si and GaAsApplied Physics Letters, 1984
- Systematic studies of the semiconductor/liquid junction: n-gallium arsenide phosphide anodes in aqueous selenide (Se2-/Se22-) solutionsThe Journal of Physical Chemistry, 1984
- Correlation of Fermi-level energy and chemistry at InP(100) interfacesApplied Physics Letters, 1983
- THE CALCULATION OF SOLAR EFFICIENCYPublished by Elsevier ,1983
- Fermi-level pinning and chemical structure of InP–metal interfacesJournal of Vacuum Science and Technology, 1982
- Chemical etching and cleaning procedures for Si, Ge, and some III-V compound semiconductorsApplied Physics Letters, 1981
- Fermi Level Position at Metal-Semiconductor InterfacesPhysical Review B, 1964