Properties of CMOS devices and circuits fabricated on high-resistivity, detector-grade silicon
- 1 August 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (4) , 809-813
- https://doi.org/10.1109/23.159712
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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