A C-Band All Ferrite Integrated Wideband High Power GaAs Avalanche Diode Amplifier

1 January 1972

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 179-181
https://doi.org/10.1109/gmtt.1972.1123038

Abstract

A C-band 4-stage, 20 dB gain, 3-watt 25% bandwidth all ferrite substrate integrated GaAs avalanche diode amplifier is developed. The design procedure, as well as the amplifier performance including amplifier phase characteristics, is described. A power combining circuit which increases the output power capability by a factor of two is included in the output stage.

Keywords

FERRITES
GALLIUM ARSENIDE
DIODES
BROADBAND AMPLIFIERS
HIGH POWER AMPLIFIERS
GAIN
BANDWIDTH
CIRCUITS
POWER GENERATION
POWER AMPLIFIERS

This publication has 2 references indexed in Scilit:

A One Watt CW Avalanche Diode Source or Power Amplifier
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1969
Prototypes for Use in Broadbanding Reflection Amplifiers
IEEE Transactions on Microwave Theory and Techniques, 1963