O-Dimensional-induced optical properties in self-assembled quantum dots
- 31 December 1994
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 16 (3) , 303-309
- https://doi.org/10.1016/s0749-6036(09)80020-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Structural and optical properties of self-assembled InGaAs quantum dotsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Time-resolved optical characterization of InGaAs/GaAs quantum dotsApplied Physics Letters, 1994
- Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- The growth of highly mismatched InxGa1−xAs (0.28≤x≤1) on GaAs by molecular-beam epitaxyJournal of Applied Physics, 1993
- Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)Applied Physics Letters, 1993
- Effect of strain on surface morphology in highly strained InGaAs filmsPhysical Review Letters, 1991
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985