Implanted-Barrier Two-Phase Charge-Coupled Device
- 15 December 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (12) , 520-522
- https://doi.org/10.1063/1.1653797
Abstract
A new kind of charge‐coupled device (CCD) utilizing an ion‐implanted barrier and only two nonoverlapping electrodes per bit is described. The use of implanted charge substantially simplifies device structure. The two‐electrode‐per‐bit configuration permits operation with only one clock. In addition, the device performs better than any previously reported CCD with a loss per transfer of less than 0. 1% up to 6. 5 MHz and 2% at 17 MHz.Keywords
This publication has 3 references indexed in Scilit:
- SURFACE CHARGE TRANSPORT IN SILICONApplied Physics Letters, 1970
- CHARGE COUPLED 8-BIT SHIFT REGISTERApplied Physics Letters, 1970
- Charge Coupled Semiconductor DevicesBell System Technical Journal, 1970