Electronic conduction in GaN nanowires
- 13 February 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (7) , 072111
- https://doi.org/10.1063/1.2177629
Abstract
Conductivity mechanisms in unintentionally doped GaN nanowires (NWs) are studied. Gated current-voltage measurements and threshold voltage modeling demonstrate the unique impact of device parameters on NW field-effect transistors as compared to conventional systems. Temperature-dependent resistivity results, acquired with a scanning tunneling microscope equipped with multiple tips, reveal only mild temperature dependence at higher temperatures, with temperature-independent resistivity observed below ∼100K indicating impurity band conduction. The likely origins and implications of these results are discussed.Keywords
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