Quantum interference in a one-dimensional silicon nanowire
- 15 August 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 68 (7) , 075311
- https://doi.org/10.1103/physrevb.68.075311
Abstract
We study electronic transport within a lithographically defined silicon nanowire for zero and finite bias. The 10-nm wide and 500-nm long nanowire is fabricated by advanced electron-beam lithographic techniques. Transport experiments reveal clear quantum size effects in the conduction through the wire. Energy quantization within the wire leads to a shift in conduction threshold. Quantum interference effects cause an oscillatory pattern in the conductance. At low source-drain bias, transport is dominated by shallow tunneling barriers. At higher bias, additional nanowire modes are found to contribute to the conductance.Keywords
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