Ultra-submicrometer-gate AlGaAs/GaAs HEMTs
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (5) , 209-211
- https://doi.org/10.1109/55.55252
Abstract
Ultra-submicrometer-gate AlGaAs/GaAs high-electron-mobility transistors (HEMTs) that have gate lengths ranging from 25 to 85 nm and were fabricated using electron-beam lithographic techniques on epitaxial wafers grown by molecular beam epitaxy are discussed. These devices show that velocity overshoot and short-gate geometry effects play an important role for the gate lengths less than 100 nm. The maximum intrinsic transconductance is 215 mS/mm, and the effective saturated electron velocity reaches 3*10/sup 7/ cm/s for a 30-nm HEMT.<>Keywords
This publication has 8 references indexed in Scilit:
- Electron dynamics and device physics of short-channel HEMTs: transverse-domain formation, velocity overshoot, and short-channel effectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Overshoot saturation in ultra-submicron FETs due to minimum acceleration lengthsSolid-State Electronics, 1989
- DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTsIEEE Transactions on Electron Devices, 1989
- Velocity overshoot in ultra-short-gate-length GaAs MESFETsIEEE Transactions on Electron Devices, 1988
- Sub-100-nm gate length GaAs metal–semiconductor field-effect transistors and modulation-doped field-effect transistors fabricated by a combination of molecular-beam epitaxy and electron-beam lithographyJournal of Vacuum Science & Technology B, 1988
- 0.1-µm Gate-length pseudomorphic HEMT'sIEEE Electron Device Letters, 1987
- Model for modulation doped field effect transistorIEEE Electron Device Letters, 1982
- Characteristics of junction field effect devices with small channel length-to-width ratiosSolid-State Electronics, 1967