Overshoot saturation in ultra-submicron FETs due to minimum acceleration lengths
- 1 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1609-1613
- https://doi.org/10.1016/0038-1101(89)90282-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Ultimate scaling limits for high-frequency GaAs MESFETsIEEE Transactions on Electron Devices, 1988
- Voltage-current characteristics of GaAs J-FET's in the hot electron rangeSolid-State Electronics, 1970
- Characteristics of junction field effect devices with small channel length-to-width ratiosSolid-State Electronics, 1967
- A Unipolar "Field-Effect" TransistorProceedings of the IRE, 1952