Ultimate scaling limits for high-frequency GaAs MESFETs
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 839-848
- https://doi.org/10.1109/16.3334
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Surface potential effect on gate—Drain avalanche breakdown in GaAs MESFET'sIEEE Transactions on Electron Devices, 1987
- GaAs MESFET interface considerationsIEEE Transactions on Electron Devices, 1987
- Degradation mechanisms induced by high current density in Al-gate GaAs MESFET'sIEEE Transactions on Electron Devices, 1987
- Reverse breakdown in GaAs MESFET'sIEEE Transactions on Electron Devices, 1986
- Superior low-noise GaAs MESFET's with graded channel grown by MBEIEEE Transactions on Electron Devices, 1986
- Calculations of high-speed performance for submicrometer ion-implanted GaAs MESFET devicesIEEE Transactions on Electron Devices, 1986
- Scaled performance for submicron GaAs MESFET'sIEEE Electron Device Letters, 1985
- Power-limiting breakdown effects in GaAs MESFET'sIEEE Transactions on Electron Devices, 1981
- Control of gate—Drain avalanche in GaAs MESFET'sIEEE Transactions on Electron Devices, 1980
- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968