Compliant substrate technology: Status and prospects
- 1 July 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (4) , 2308-2312
- https://doi.org/10.1116/1.590166
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Photoluminescence properties of GaN grown on compliant silicon-on-insulator substratesApplied Physics Letters, 1997
- Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffractionApplied Physics Letters, 1997
- Analysis of GaAs Substrate Removal Etching with Citric Acid : H 2 O 2 and NH 4 OH : H 2 O 2 for Application to Compliant SubstratesJournal of the Electrochemical Society, 1997
- A critical thickness condition for a strained compliant substrate/epitaxial film systemApplied Physics Letters, 1996
- Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technologyJournal of Electronic Materials, 1996
- Strain-modulated epitaxy: Modification of growth kinetics via patterned, compliant substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Approach to obtain high quality GaN on Si and SiC-on-silicon-on-insulator compliant substrate by molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Overcoming the pseudomorphic critical thickness limit using compliant substratesApplied Physics Letters, 1994
- Dynamic model for pseudomorphic structures grown on compliant substrates: An approach to extend the critical thicknessApplied Physics Letters, 1993
- New approach to grow pseudomorphic structures over the critical thicknessApplied Physics Letters, 1991